| PART |
Description |
Maker |
| HGTP12N60C3 HGT1S12N60C3S HGTP12N60C3NL |
24A,600V, UFS Series N-Channel IGBTs 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
24A, 600V, UFS Series N-Channel IGBTs
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HGTG24N60D1D |
3.3V 36-mc CPLD
24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
| HGTG12N60C3D |
From old datasheet system
24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
|
FAIRCHILD[Fairchild Semiconductor]
|
| HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S |
24A, 600V, UFS Series N-Channel IGBTs 4A00V的，的ufs系列N沟道IGBT
24A/ 600V/ UFS Series N-Channel IGBTs
|
Harris, Corp.
HARRIS[Harris Corporation]
Fairchild Semiconductor
|
| R6024ENZ1 |
Nch 600V 24A Power MOSFET
|
Rohm
|
| IRG4PH50KD IRG4PH50KD-E |
45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| STF24NF12 |
N-channel 120V - 0.070Ω - 24A TO-220FP Low gate charge STripFET?/a> II MOSFET
24 A, 120 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 120V - 0.070Ω - 24A TO-220FP Low gate charge STripFET II MOSFET
|
STMicroelectronics
|
| JANSR2N7406 FN4376 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ N-Channel Power MOSFET
24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| ISL9R2480G2 |
24A/ 800V Stealth Diode
24A, 800V Stealth⑩ Diode
24A, 800V Stealth?/a> Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDP24N4012 |
N-Channel MOSFET 400V, 24A, 0.175Ω
|
Fairchild Semiconductor
|
| FDA24N50 |
N-Channel UniFETTM MOSFET 500V, 24A, 190m
|
Fairchild Semiconductor
|
